advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 30v low on-resistance r ds(on) 28m fast switching performance i d 7a rohs compliant p-ch bv dss -30v r ds(on) 50m description i d -5.3a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 30 -30 v v gs gate-source voltage + 20 + 20 v i d @t a =25 continuous drain current 3 7.0 -5.3 a i d @t a =70 continuous drain current 3 5.8 -4.7 a i dm pulsed drain current 1 20 -20 a p d @t a =25 total power dissipation 2 w linear derating factor 0.016 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice 201207173 parameter 1 thermal data AP4501AGM-HF halogen-free product g2 d2 s2 g1 d1 s1 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s1 g1 s2 g2 d1 d1 d2 d2 so-8
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - - 28 m ? v gs =4.5v, i d =5a - - 42 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =6a - 6 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =6a - 8.4 13.5 nc q gs gate-source charge v ds =24v - 1.4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4.7 - nc t d(on) turn-on delay time 2 v ds =20v - 5 - ns t r rise time i d =1a - 8 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 18.5 - ns t f fall time r d =20 -9- ns c iss input capacitance v gs =0v - 485 770 pf c oss output capacitance v ds =25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf r g gate resistance f=1.0mhz - 1.8 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =7a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =6a, v gs =0 v , - 19 - ns q rr reverse recovery charge di/dt=100a/s - 11 - nc 2 AP4501AGM-HF
ap4501agm-h f p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-5.3a - - 50 m ? v gs =-4.5v, i d =-4.2a - - 90 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-5a - 5 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-5a - 8 13 nc q gs gate-source charge v ds =-15v - 1.7 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 4.5 - nc t d(on) turn-on delay time 2 v ds =-15v - 6.7 - ns t r rise time i d =-1a - 10 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-10v - 21 - ns t f fall time r d =15 -10- ns c iss input capacitance v gs =0v - 595 950 pf c oss output capacitance v ds =-25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf r g gate resistance f=1.0mhz - 10 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-2.6a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-5a, v gs =0 v , - 18 - ns q rr reverse recovery charge di/dt=100a/s - 11 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3
ap4501agm-h f n-channel fig 1. typical output characteristics fig 2. typical output characteristics 30 -30 fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 0 10 20 30 40 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 10v 7.0v 5.0v 4.5v v g =3.0v 0 10 20 30 40 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 10v 7.0v 5.0v 4.5v v g =3.0v 18 22 26 30 34 246810 v gs , gate-to-source voltage (v) r ds(on0 (m ) i d = 5a t a = 25 o c 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
a p4501agm-h f n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics 30 -30 fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 5 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0369121518 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =24v 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90%
ap4501agm-h f p-channel fig 1. typical output characteristics fig 2. typical output characteristics 30 -30 fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 0 10 20 30 40 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c - 10v - 7.0v - 5.0v - 4.5v v g = - 3 .0v 0 10 20 30 40 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c - 10v - 7.0v - 5.0v - 4.5v v g = - 3 .0v 30 40 50 60 70 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -4.2 a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -5.3 a v g = - 10v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.6 0.8 1.0 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v)
a p4501agm-h f p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics 30 -30 fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 7 q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0.0 4.0 8.0 12.0 16.0 20.0 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -5a v ds = -15v 10 100 1000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90%
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